Example 1 · difficulty 2/5
For a p-n junction diode biased in reverse (well below the breakdown voltage), increasing the magnitude of the reverse bias causes the width of the depletion region to:
- A. increase, because majority carriers on both sides are pulled away from the junction
- B. decrease, because minority carriers neutralise the exposed immobile ions
- C. remain unchanged, since the dopant concentration is fixed
- D. first increase and then decrease, owing to enhanced diffusion of carriers